JournalszaaVol. 10, No. 1pp. 43–48

On a Free Boundary Problem Modelling Thermal Oxidation of Silicon

  • Guan Zhicheng

    Zhejiang University, Hangzhou, China
On a Free Boundary Problem Modelling Thermal Oxidation of Silicon cover
Download PDF

Abstract

Considering the problem modelling thermal oxidation of silicon as one-phase non-equilibrium problem, we use Schauder’s fixed point theorem to prove the existence and uniqueness of the classical solution.

Cite this article

Guan Zhicheng, On a Free Boundary Problem Modelling Thermal Oxidation of Silicon. Z. Anal. Anwend. 10 (1991), no. 1, pp. 43–48

DOI 10.4171/ZAA/429