On a Free Boundary Problem Modelling Thermal Oxidation of Silicon
Guan Zhicheng
Zhejiang University, Hangzhou, China
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Abstract
Considering the problem modelling thermal oxidation of silicon as one-phase non-equilibrium problem, we use Schauder’s fixed point theorem to prove the existence and uniqueness of the classical solution.
Cite this article
Guan Zhicheng, On a Free Boundary Problem Modelling Thermal Oxidation of Silicon. Z. Anal. Anwend. 10 (1991), no. 1, pp. 43–48
DOI 10.4171/ZAA/429