JournalszaaVol. 7, No. 1pp. 57–66

A Free Boundary Value Problem Modeling Thermal Oxidation of Silicon

  • K. Gröger

    Karl-Weierstraß-Institut für Mathematik, Berlin, Germany

  • N. Strecker

    Karl-Weierstraß-Institut für Mathematik, Berlin, Germany
A Free Boundary Value Problem Modeling Thermal Oxidation of Silicon cover
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Abstract

Using results on evolution equations in Hilbert spaces a problem describing the diffusion of an oxidant through an oxide layer and the growth of this layer caused by the oxidation of silicon is solved. Moreover, estimates for the growth of the thickness of the oxide layer being of practical interest are given.

Cite this article

K. Gröger, N. Strecker, A Free Boundary Value Problem Modeling Thermal Oxidation of Silicon. Z. Anal. Anwend. 7 (1988), no. 1, pp. 57–66

DOI 10.4171/ZAA/282